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Profs. Dierolf and Cargill use gallium-nitride to develop light-emitting semiconductors.
An all-optical network, says Volkmar Dierolf, associate professor of physics at Lehigh and a member of the Center for Optical Technologies, would enable scientists and engineers to increase the capacity of optical transmission lines. Developing all-optical networks is one of the major research thrusts of the COT. Jean Toulouse, professor of physics is heading up this effort, which includes faculty from physics (Toulouse, Ivan Biaggio and Dierolf) and materials science and engineering (Himanshu Jain), as well as several researchers from Penn State University, Lehigh's chief partner in the COT. Jointly, the group is developing nonlinear novel materials and studying nonlinear effects that can be used to manipulate light by using light.
He has developed a method of using a laser to directly write a ferro-electric domain structure into lithium niobate crystals. The method shows promise for optimizing nonlinear phenomena, such as the conversion of an infrared laser into a green laser. By "flipping" the ferro-electric axis up and down, says Dierolf, this pattern can be written directly using a laser with a confocal microscope. The depth of the writing is 30 microns; the period is 15 microns. Dierolf's group has also learned to detect directly, with high spectral, spatial and temporal resolution, the moment at which the ferro-electric axis is flipping. "This enables us to obtain feedback and control the phenomenon," he says.
Earlier this year, Dierolf published two articles on his work in ferroelectric domain imaging and waveguide imaging. "Ferroelectric domain imaging by defect-luminescence microscopy" appeared in the Journal of Applied Physics and was co-authored by Chris Sandmann, a graduate student in physics at Lehigh; S. Kim and Venkat Gopalan of Penn State's department of materials science and engineering; and K. Polgar of the Institute for Solid State Physics and Optics of the Hungarian Academy of Science.
In another project, which is supported by the U.S. Army Research Laboratory and the COT, Dierolf and Cargill are developing light-emitting semiconductors based on gallium-nitride. The semiconductors could have applications as sensors, or detectors. One of the researchers' goals is to use gallium-aluminum-nitride-based semiconductor materials, which possess a very wide bandgap and have shorter emission wavelengths that allow a tighter focus than visible light. The Army is interested in this project because of the semiconductors' potential for detecting biological and chemical warfare agents. The project is a multidisciplinary endeavor, combining Dierolf's expertise and the physics department's facilities for photo-luminescent analysis with the materials science and engineering department's facilities for cathodoluminescence, in which materials are characterized with electron beams. Dierolf and Cargill hope to push the luminescence wavelength further into the ultraviolet region. This ability would be of great use to the display industry, particularly high-density information storage on DVDs and CDs. Because the smallest "spot" of storage is limited by the wavelength, light signals with shorter wavelengths afford more density and therefore more storage capacity.
Dierolf has learned to do spatial mapping of luminescent layer displays with photolumescence, which allows him to see property variations in different locations on a device. Scientists seek displays with homogeneous properties everywhere; therefore, it is necessary to understand why and where properties are different, why a region of a display is bright or dull, why it emits or does not emit light. |
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